Fabrication and Frequency Response Characteristics of A1N-Based Solidly Mounted Resonator  

作　　者：熊娟 顾豪爽 胡宽 胡明哲 

机构地区：[1]Department of Physics and Electronic Technology, Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, Hubei University, Wuhan 430062

出　　处：《Chinese Physics Letters》2009年第4期252-255,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 50872031, and the Natural Science Foundation of Hubei Province under Grant No 2008CDA018.

摘　　要：Film bulk acoustic resonator （FBAR） with solidly mounted resonator （SMR）-type is carried out by rf magnetic sputtering. To fabricate SMR-type FBAR, alternative high and low acoustic impedance layers, Mo/Ti multilayer, are adopted as Bragg reflector deposited by dc magnetron sputtering. The influences of sputtering pressure, substrate temperature and sputtering power on the surface roughness of Bragg reflector layer are discussed. From the atom force microscopy （AFM） analysis, the surface roughness of the Bragg reflector is improved remarkably by controlling deposition conditions. Under the appropriate sputtering condition, AlN thin films with highly c-axis-preferred orientation are deposited by rf magnetron sputtering. The performance of fabricated Mo/Ti SMR shows that the electromechanical coupling coefficient is 3.89%, the series and parallel resonant frequencies appear at 2.49 and 2.53 GHz, with their quality factors 134.2 and 97.6, respectively.Film bulk acoustic resonator （FBAR） with solidly mounted resonator （SMR）-type is carried out by rf magnetic sputtering. To fabricate SMR-type FBAR, alternative high and low acoustic impedance layers, Mo/Ti multilayer, are adopted as Bragg reflector deposited by dc magnetron sputtering. The influences of sputtering pressure, substrate temperature and sputtering power on the surface roughness of Bragg reflector layer are discussed. From the atom force microscopy （AFM） analysis, the surface roughness of the Bragg reflector is improved remarkably by controlling deposition conditions. Under the appropriate sputtering condition, AlN thin films with highly c-axis-preferred orientation are deposited by rf magnetron sputtering. The performance of fabricated Mo/Ti SMR shows that the electromechanical coupling coefficient is 3.89%, the series and parallel resonant frequencies appear at 2.49 and 2.53 GHz, with their quality factors 134.2 and 97.6, respectively.

分 类 号：TN751.2[电子电信—电路与系统] TM53[电气工程—电器]