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机构地区:[1]State Key Laboratory of Material Modification by Laser, Ion and Electron Beams, Dalian University of Technology [2]Institute of Optoelectronic Materials and Device, School of Materials Science and Engineering, Dalian Jiaotong University
出 处:《Chinese Physics B》2009年第4期1570-1573,共4页中国物理B(英文版)
基 金:Project supported by the Major Program of the National Natural Science Foundation of China (Grant No 50390060);the National Natural Science Foundation of China (Grant Nos 60576022 and 50572012)
摘 要:This paper reports that amorphous silicon nitride (a-SiNx) overcoats were deposited at room temperature by microwave ECR plasma enhanced unbalanced magnetron sputtering. The 2 nm a-SiNs overcoat has better anti-corrosion properties than that of reference a-CNx overcoats (2 4.5 nm). The superior anti-corrosion performance is attributed to its stoichiometric bond structure, where 94.8% Si atoms form Si-N asymmetric stretching vibration bonds. The N/Si ratio is 1.33 as in the stoichiometry of Si3N4 and corresponds to the highest hardness of 25.0 GPa. The surface is atomically smooth with RMS 〈 0.2 nm. The ultra-thin a-SiNx overcoats are promising for hard disks and read/write heads protective coatings.This paper reports that amorphous silicon nitride (a-SiNx) overcoats were deposited at room temperature by microwave ECR plasma enhanced unbalanced magnetron sputtering. The 2 nm a-SiNs overcoat has better anti-corrosion properties than that of reference a-CNx overcoats (2 4.5 nm). The superior anti-corrosion performance is attributed to its stoichiometric bond structure, where 94.8% Si atoms form Si-N asymmetric stretching vibration bonds. The N/Si ratio is 1.33 as in the stoichiometry of Si3N4 and corresponds to the highest hardness of 25.0 GPa. The surface is atomically smooth with RMS 〈 0.2 nm. The ultra-thin a-SiNx overcoats are promising for hard disks and read/write heads protective coatings.
关 键 词:hard disk overcoat ULTRA-THIN a-SiNx plasma enhanced magnetron sputtering
分 类 号:TP333.35[自动化与计算机技术—计算机系统结构]
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