基于噪声相消和线性度提高的低噪声放大器  

Improvement of CMOS LNA by noise reduction and linearity

作　　者：刘华珠[1,2] 贺前华[1] 

机构地区：[1]华南理工大学电子与信息学院,广东广州510640 [2]东莞理工学院电子工程学院,广东东莞523808

出　　处：《华中科技大学学报（自然科学版）》2009年第3期43-45,53,共4页Journal of Huazhong University of Science and Technology(Natural Science Edition)

基　　金：国家自然科学基金资助项目(60572141);东莞市科技计划资助项目(2006D049)

摘　　要：鉴于传统共源共栅低噪声放大器由于受共栅级的影响,其噪声和线性度都不理想,为此在共栅级上引入一对交叉耦合电容和电感,以消除共栅级的噪声并提高放大器的线性度.采用特许半导体公司0.25μm射频互补金属氧化物半导体工艺进行了设计,仿真结果表明低噪声放大器在2.4 GHz处的噪声系数仅有1.34dB,该电路能够提供17.27 dB的正向增益、小于-38.37 dB的反向传输系数、小于-27.73 dB的输入反射系数、小于-15.85 dB的输出反射系数,该放大器的三阶交调点为0.58 dBm,消耗的功率为11.23 mW.Because of the influences of cascade transistor, the traditional common source （CS） cascade low-noise amplifier （LNA） cannot attain excellent low noise and high linearity performances, a couple of cross-coupling capacitors and inductors connected at the gates of the cascode transistors can eliminate the influences of the noise of cascode and improve the linearity of low-noise amplifier in this paper. This circuit bases on Chartered Semiconductor Company＇s 0.25μm radio frequency complementary metal oxide semiconductor （CMOS） technology. The simulation results demonstrate that the lownoise amplifier （LNA）achieves 1.34 dB noise figure at 2.4 GHz. And its forward gain is 17.27 dB, reverse transmission coefficient less than --38.37 dB, input reflection coefficient less than --27.73 dB, output reflection coefficient less than --15.85 dB. The output power of LNA＇s third-order inter- cept point （IIP3） is 0.58 dBm, circuit consuming power is 11.23 mW.

关 键 词：放大器 噪声系数 噪声相消 低噪声 交叉耦合电容 线性度提高 

分 类 号：TN722.3[电子电信—电路与系统]