室温不可逆原电池技术制备BaMoO_4多晶薄膜(英文)  

Room Temperature Preparation of BaMoO_4 Polycrystalline Thin Film by a Nonreversible Galvanic Cell Technique

作　　者：徐成刚[1] 赖欣[1] 崔春华[1] 毕剑[1] 高道江[1] 

机构地区：[1]四川师范大学化学与材料科学学院,四川成都610066

出　　处：《四川师范大学学报（自然科学版）》2009年第2期235-238,共4页Journal of Sichuan Normal University（Natural Science）

基　　金：Supported by the National Science Foundation of China(50472103)~~

摘　　要：室温条件下于Ba(OH)_2溶液中采用无外加电流的非可逆原电池技术在钼金属基片上制备了BaMoO_4多晶薄膜.采用XRD、SEM和Raman技术表征了制备薄膜的微结构;同时探讨了BaMoO_4薄膜的电化学形成机制.XRD,SEM和Raman分析结果表明制备的薄膜表面均匀、致密,是白钨矿结构的四方单相BaMoO_4;非可逆原电池条件下BaMoO_4薄膜的形成包括阳极氧化溶解反应和溶液沉积反应,原电池反应的驱动力是电池的正极与负极的电势差.Well-crystallized BaMoO4 polycrystalline films were prepared directly on molybdenum substrate by a nonreversible galvanic cell method without applied current in barium hydroxide aqueous solution at room temperature （ 25 ℃ ） The mierostructures of the prepared films were characterized by using XRD, SEM and Raman spectrometer, respectively; and the formation mechanism of the films under the electrochemical conditions was discussed. The XRD, SEM and Raman measurements results indicate that the as-prepared thin films are a single phase BaMoO4 with a scheelite-type structure and show uniform and homogeneous surfaces; the formation of BaMoO4 film includes anode dissolution-oxidation reaction and solution deposition reaction in the nonreversible galvanic cell. The driving force of the nonreversible galvanic cell reaction is the difference of the electrode potential between anode and cathode of the cell.

关 键 词：BaMoO4多晶薄膜 非可逆原电池 制备 形成机制 

分 类 号：O614.23[理学—无机化学] TB34[理学—化学]