化学溶液沉积制备涂层导体Eu_(0.3)Ce_(0.7)O_(1.85-x)单一缓冲层  

Preparation of Eu_(0.3)Ce_(0.7)O_(1.85-x) Single Buffer Layer on Coated Conductors by Chemical Solution Deposition

作　　者：孙瑞萍[1] 李果[1] 蒲明华[1] 王文涛[1] 张欣 武伟[1] 杨烨[1] 赵勇[1] 

机构地区：[1]西南交通大学材料先进技术教育部重点实验室,四川成都610031

出　　处：《稀有金属材料与工程》2009年第3期523-526,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(50672078);国家杰出青年基金(50588201);国家"973"项目(2007CB616906)

摘　　要：采用高分子辅助化学溶液沉积(PACSD)方法,在双轴织构的NiW(200)合金基底上沉积了厚度大于160nm的Eu0.3Ce0.7O1.85-x(ECO)单一缓冲层。制得的ECO缓冲层双轴织构良好,表面平整、无裂纹。同时,Eu的掺杂提高了CeO2单一缓冲层薄膜的临界厚度。在沉积了ECO缓冲层的NiW基带上外延生长的YBCO薄膜,超导零电阻转变温度Tc0=86K,临界电流密度达到Jc(0T,77K)=0.4MA/cm2。本研究提供了一种操作简单、成本低廉、性能优良的制备涂层导体单一缓冲层的方法。A novel polymer-assisted chemical solution deposition （PACSD） has been proposed to deposit an over-160nm-thick Eu0.3Ce0.7O1.85-x1 （ECO） single buffer layer on biaxially textured NiW （200） substrate, As-grown ECO buffer layer displayed excellent bi-axial texture as well as smooth, crack-free microstructure. It is observed that Eu-doping can augment the critical thickness of CeO2 as single buffer layer. YBCO deposited on ECO buffered NiW yielded a zero transition temperature at Tc0= 86 K and a critical current ofJc （0 T, 77 K） = 0.4 MA/cm^2. These results offer a simple and cost-effective approach for the preparation of single buffer layer on coated conductors.

关 键 词：EU掺杂 CeO2单一缓冲层 高分子辅助化学溶液沉积(PACSD) 

分 类 号：TG174.4[金属学及工艺—金属表面处理]