精铟的化学清洗提纯  

Chemical purifying process of refined indium

作　　者：于丽敏[1] 蒋文全[1] 孙海峰[1] 傅钟臻[1] 夏雯[1] 刘红[1] 孙泽明[1] 

机构地区：[1]北京有色金属研究总院分析测试中心,北京100088

出　　处：《中国有色金属学报》2009年第3期589-594,共6页The Chinese Journal of Nonferrous Metals

基　　金：国家科技支撑计划资助项目(2006BAF07B02)

摘　　要：研究精铟的化学清洗提纯过程,提出甘油碘化钾熔炼及甘油氯化铵熔炼相联合进行化学提纯的方法。研究表明:该方法可将镉、铊等杂质含量降低到10-6以下,并可直接得到表面光亮平整无杂色的铟电极,化学清洗提纯工艺简单易操作;甘油碘化钾熔炼提纯的最佳实验条件是质量比控制在m(KI):m(In)≥0.01,m(glycerin):m(In)≥0.3,搅拌时间控制在1h;甘油氯化铵处理时氯化铵的用量应控制在m(NH4Cl):m(glycerin)=0.15。The chemical purifying process of refined indium was studied. In order to remove impurities Cd and T1 effectively, glycerin-KI and glycerin-NH4Cl were used simultaneously to purify indium. The results show that through this method the contents of impurities Cd and T1 in indium can be reduced to less than 10^-6, thus refined indium anode with smooth and bright surface can be gained directly and easily. The best experimental conditions of glycerin-KI are m（KI）：m（In）≥0.01, m（glycerin）：m（In）≥0.3, and the stirring time should be controlled within 1 h. The ammonium chloride concentration should be controlled within m（NH4Cl）：m（glycerin）=0.15.

关 键 词：精铟 化学清洗 甘油 碘化钾 氯化铵 

分 类 号：TF114.1[冶金工程—冶金物理化学]