双偏振双波长混合应变量子阱激光器  

Dual Polarization Dual Wavelength Mixed Strained layer Quantum well Lasers

作　　者：张哲民[1] 金锦炎 黄格凡 李同宁 黄德修 

机构地区：[1]华中理工大学 [2]武汉电信器件公司

出　　处：《光通信研究》1998年第2期46-49,共4页Study on Optical Communications

基　　金：863-307主题资助

摘　　要：本文报道了以混合应变量子阱结构为有源区的激光器。对有源区分别采用体材料、匹配量子阱、压应变量子阱和混合应变量子阱结构的激光器进行了比较。混合应变量子阱激光器能同时工作于两种偏振模式，而且两种偏振模式的激射波长不同。结合实验结果，我们可以看出在混合应变量子阱结构中，从偏振自发辐射谱峰值波长差不能推断两种量子阱的能带填充效应大小。The dual polarization dual wavelength lasers with active layer of mixed strained layer quantum well are reported in this paper. These lasers are compared with lasers with bulk active layer, lattice matched quantum well active layer, and compressively strained quantum well active layer.These lasers can operate with both TE and TM polarization lasing at the same time, and the two polarization modes have different lasing wavelengths. Combining other people's experimental results, it is concluded that in the mixed strained layer quantum well structure, we can't determine the band filling effect in the two kinds of strained layer quantum wells from the peak wavelength difference of the two polarized spontaneous emission spectra.

关 键 词：半导体激光器 应变量子阱 偏振 

分 类 号：TN248.4[电子电信—物理电子学]