升温速度对压敏瓷显微组织和电性能的影响  

The Effect of Heating Rate on Microstructure and Electrical Properties of Varistor Ceramics

作　　者：徐东[1,2] 施利毅[1] 吴振红[1] 钟庆东[1] 

机构地区：[1]上海大学纳米科学与技术研究中心,上海200444 [2]江苏大学材料科学与工程学院,江苏镇江212013

出　　处：《压电与声光》2009年第2期244-246,250,共4页Piezoelectrics & Acoustooptics

基　　金：上海市科委技术创新人才团队建设专项基金资助项目(06DZ05902);上海市科委学科带头人计划基金资助项目(07XD14014);上海市教育委员会重点学科建设基金资助项目(J50102)

摘　　要：采用不同的升温速度制备ZnO-Bi2O3压敏瓷,通过扫描电镜和X-射线衍射对其显微组织和相成分进行了分析,探讨了升温速度对氧化锌压敏瓷电性能和显微组织影响机理。结果表明,当升温速度为5℃/min时,压敏瓷具有较为理想的综合电性能,其电位梯度为332 V/mm,非线性系数为30,漏电流为0.1μA。ZnO-Bi2O3 based varistor ceramics were sintering by using different heating rate, and the electrical properties and microstructure of the varistor ceramics were studied by SEM and XRD. The results show that when the heating rate was 5 ℃/min, ZnO Bi2O3 based varistor ceramics exhibit comparatively ideal comprehensive electrical properties. Its threshold voltage was 332 V/ram, the nonlinear coefficient was 30 and the leakage current was 0.1 μA.

关 键 词：压敏电阻 氧化锌 升温速度 电性能 显微组织 

分 类 号：TB34[一般工业技术—材料科学与工程] TN304.93[电子电信—物理电子学]