碲铟汞多晶料合成与晶体生长  

Synthesis and Crystal Growth of Mercury Indium Telluride

作　　者：王领航[1] 介万奇[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072

出　　处：《稀有金属》2009年第1期129-132,共4页Chinese Journal of Rare Metals

基　　金：国家自然科学基金(50336040);西北工业大学博士创新基金(CX200606);西北工业大学研究生种子基金(200612)资助项目

摘　　要：以高纯Hg,In,Te单质为原料,通过元素直接化合反应合成了碲铟汞(MIT)多晶料,并利用合成的高纯多晶料,在特殊设计的坩埚中,采用垂直Bridgman法通过自发成核方式成功地生长了尺寸为Φ15 mm×175 mm的MIT单晶体。利用X射线粉末衍射技术对MIT晶体结构及物相进行了分析,结果表明,所获得的晶体是单相的MIT晶体,为缺陷闪锌矿结构,空间群为F43m。采用高分辨X射线衍射仪测量了所生长MIT晶体的摇摆曲线,结果表明,所得晶体完整性较好,为高质量的单晶体。对所生长的MIT晶体进行了热分析,发现在MIT晶体中有Hg溢出现象。The polycrystalline material of mercury indium telluride （MIT） was synthesized through a direct reaction between high purity Hg, In and Te. The MIT crystal with dimensions of Ф 15 mm × 175 mm was successfully grown by using vertical Bridgman method from the synthesized polycrystalline material. The asgrown crystal was analyzed by powder X-ray diffraction technique and determined to be single phase with defect zinc blende structure and space group F^-43m. The rocking curve of the as-grown crystal showed that the crystal was a single crystal with high quality. The abnormal thermal behavior of Hg overflow was found through DSC and TG analysis, which was of very importance to crystal growth as well as device fabrication and application.

关 键 词：碲铟汞 晶体生长 垂直Bridgman法 半导体材料 近红外光电探测器 

分 类 号：O782[理学—晶体学] TN304.2[电子电信—物理电子学]