热处理对Ta／Ni0.65Co0.35薄膜微结构和磁电阻性能的影响  

Effects of heat treatment on the microstructure and magnetoresistance properties of Ta/Ni_(0.65)Co_(0.35) films

作　　者：王立锦[1] 陈连康[1] 郭歌[1] 王云蛟[2] 于亚多[2] 于广华[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083 [2]河北师范大学物理科学与信息工程学院,石家庄050031

出　　处：《北京科技大学学报》2009年第3期362-365,387,共5页Journal of University of Science and Technology Beijing

基　　金：国家自然科学基金资助项目(No.50671008)

摘　　要：选用磁致伸缩系数接近于零的软磁合金Ta/Ni0.65Co0.35作为磁敏感层,研究了热处理对Ta/Ni0.65Co0.35薄膜织构、磁学性能和磁电阻性能的影响.制备了Barber电极结构的磁电阻元件,对磁电阻元件的输出特性进行了测试.结果表明:真空退火可以有效降低薄膜内的应力和杂质缺陷,使晶粒尺寸增大,晶界对传导电子的散射减少,各向异性磁电阻(AMR)值提高;真空磁场退火有利于提高薄膜的单轴各向异性,使薄膜的AMR值和磁传感器元件的灵敏度增加.Soft magnetic alloy Ta/Ni0.65Co0.35 films, whose magnetostriction coefficient is close to zero, were selected as sensitive layer. The effects of heat treatment on the microstructure and the anisotropie magnetoresistance （AMR） properties of Ta/Ni65Co35 films were investigated. A magnetic resistance element with Barber electrode structure was made and its output characteristics were tested. The results show that vacuum annealing can be effective in reducing the stress and impurity defect distribution in the films, increase the grain size, reduce the scattering of grain boundaries to conduction electrons, and make the AMR value effectively improve. Vacuum magnetic annealing is conducive to raising the films＇ uniaxial anisotropy and make the AMR value of the films and the sensitivity of the magnetic sensor element increase.

关 键 词：各向异性磁电阻(AMR) 薄膜材料 织构 传感器 灵敏度 

分 类 号：TM271.2[一般工业技术—材料科学与工程] O484.43[电气工程—电工理论与新技术]