电沉积和硒化制备CuInSe2薄膜  

Preparation of CuInSe_2 thin films by electrodeposition and selenization

作　　者：王延来[1] 尚升[1] 聂洪波[1] 倪沛然 果世驹[1] 

机构地区：[1]北京科技大学粉末冶金研究所,北京100083 [2]无锡市爱芯科微电子有限公司,无锡214028

出　　处：《北京科技大学学报》2009年第3期366-370,共5页Journal of University of Science and Technology Beijing

摘　　要：以石墨为阳极、钛片为阴极,采用恒电流法制备Cu-In预制膜,然后硒化处理得到CuInSe2薄膜.分析了预制膜和CuInSe2薄膜的相组成及其影响因素.结果表明:采用不同的电沉积工艺,可以得到不同相组成的Cu-In预制膜.在保证Cu/In小于1的条件下,降低InCl3浓度和H3Cit/CuCl2浓度比,选择较高电流,可以获得具有CuIn相和Cu2In相的Cu-In预制膜.含有CuIn相和Cu2In相的Cu-In预制膜,经硒化得到的CuInSe2薄膜具有单一CuInSe2相组成,并且符合化学剂量比要求;而只含有CuIn相的预制膜硒化后除了有CuInSe2相外还出现了CuSe相.CuInSe2 thin films were prepared by selenization of electrodeposited Cu-In precursors on Ti substrate under constant current with a carbon rod worked as anode. The phase composition and its influencing factors of Cu-In precursor films and CuInSe2 thin films were studied. The results show that controlling deposition parameters can change the phase composition of Cu-In precursor films. When the atomic ratio of Cu/In is less than 1, the precursors containing the Culn phase and the Cu2In phase are obtained at a lower concentration of InCl3, a lower concentration ratio of H3Cit to CuCl2 and a higher current density. Stoichiometric CuInSe2 films with a single chalcopyrite phase are synthesized from Cu-In precursors containing the Culn phase and the Cu2In phase. The CuSe phase occurs in addition to the CuInSe2 chalcopyrite phase in Cu-rich CuInSe2 films synthesized from Cu-In precursors with only the Culn phase. Cu-In precursors with both the Culn and Cu2In phases are favorable for CuInSe2 films.

关 键 词：CuInSe2薄膜 电沉积 硒化 相结构 

分 类 号：TB383[一般工业技术—材料科学与工程] O484.1[理学—固体物理]