缺陷地结构在微带均衡器设计中的应用  

Application of DGS in the Design of Microstrip Power Equalizer

作　　者：刘红杰[1] 张德斌[1] 

机构地区：[1]南京电子技术研究所,南京210039

出　　处：《微波学报》2010年第S1期268-271,共4页Journal of Microwaves

摘　　要：本文将缺陷地结构应用到微带功率均衡器的设计中。文中对比分析了加载缺陷地结构前后均衡器谐振枝节的特性以及缺陷地结构参数对谐振枝节性能的影响,在此基础上设计了缺陷地结构微带功率均衡器。加载缺陷地结构后可以得到更大的均衡量,同时也拓展了带宽,因而可以用较少的谐振枝节来实现更宽的均衡网络,保证了器件的小型化,为微带功率均衡器的设计提供了新的结构。This article applies the DGS to the design of the microstrip power equalizer.The paper compares and analyzes the characteristics of the resonator cell before and after loading the DGS in the equalizer and the influences of the DGS parameters on the performance of resonator cell,and then design a microstrip power equalizer with DGS.The microstrip power equalizer with DGS can measure more and expand the bandwidth,so you can use less resonator cells to achieve a wider equalizer network,ensuring the miniaturization of the equalizer,providing a new structure to the design of the microstrip power equalizer.

关 键 词：行波管放大器 缺陷地结构 微带均衡器 

分 类 号：TN715[电子电信—电路与系统]