宽带高隔离度功率分配器的设计  

A Design of Wide-Band and High-Isolation Power Divider

作　　者：胡召宇[1] 徐军[1] 冉东[1] 

机构地区：[1]电子科技大学物理电子学院,成都610054

出　　处：《微波学报》2010年第S1期301-304,共4页Journal of Microwaves

摘　　要：在固态毫米波功率放大器设计中,单片MMIC输出功率较小,提高系统功率的有效方法是采用功率合成技术,目前的功率合成技术存在的设计难点是提高各分配支路间的隔离度。本文基于对传统魔T的分析和改进,提出了一种高隔离度的3dB功率分配结构。经实验测试,运用该结构设计的功率分配器,在29.3-39.3GHz的频带内两等分支路之间的隔离度可高达-42dB,两支路的不平衡度低于0.1dB,插入损耗优于-0.25dB,很好地满足了实际应用的要求。In the solid millimeter-wave power amplifier design,the output power of a single MMIC is limited,so the power combiner technology was used in the power amplifier to improve the output power of the power amplifier system.Now,the difficulty of the design of power divider/combiner is improved the isolation between each branch.A high isolation of the 3 dB power divider structure is proposed by the analysis of the traditional magic T,and the power amplifier MMIC chip can be protect in this system.The results of the experiment show that the isolation between the two branches is up to-42dB in 29.3～ 39.3GHz,and the insertion loss of the branch is more than-0.35dB,which meet the requirements of practical application.

关 键 词：魔T 功率合成 调谐杆 阻抗匹配 

分 类 号：TN626[电子电信—电路与系统]