Ku波段三级功率放大器设计  

Design of Ku-band Three-Stage Power Amplifier

作　　者：魏国强[1] 宋开军[1] 张波[1] 

机构地区：[1]电子科技大学,成都611731

出　　处：《微波学报》2010年第S2期263-265,共3页Journal of Microwaves

摘　　要：随着GaAsFET和MMIC技术的发展,GaAs微波功率器件在微波系统中得到了广泛的应用。文中设计了由3个固态功率器件级联的微波功率放大器,通过减宽腔体有效的抑制了因增益过高引起的自激现象,设计了紧凑的MMIC偏置电路以及散热结构。经测试证明,该模块在13.9～14.4GHz范用内输出功率大于42dBm。With the further development of GaAsFET and MMIC,GaAs microwave power devices has been widely used in the microwave system.In this paper,a Ku-band three-stage power amplifier has been presented and developed.The self oscillation can be sepressed effectively by decreasing the wide of cavity.The the measured results show that the output power of this amplifier is greater than 42dBm.

关 键 词：KU波段 偏置电路 固态高功率放大器 

分 类 号：TN722.75[电子电信—电路与系统]