Si衬底Al_2O_3:Eu^(3+)薄膜的溶胶-凝胶法制备及其发光性能  

Preparation and Photoluminescence Properties of Eu^(3+)-Doped Al_2O_3 Films on Silicon Substrates by the Sol-gel Method

作　　者：石涛[1,2] 周箭[1] 申乾宏[1] 

机构地区：[1]浙江大学,浙江杭州310027 [2]浙江林学院,浙江临安311300

出　　处：《稀有金属材料与工程》2010年第S2期266-270,共5页Rare Metal Materials and Engineering

基　　金：浙江省重大科技计划项目(2006C11029)

摘　　要：采用溶胶-凝胶法在Si衬底上制备Al2O3:Eu3+薄膜;并采用DTA-TG、XRD、SEM、AFM及光致发光光谱对其进行一系列表征,分析Al2O3:Eu3+薄膜的发光机制,探讨热处理温度和Eu3+掺杂浓度对发光性能的影响规律。结果表明,采用溶胶-凝胶法制备工艺,得到发光强度高的Al2O3:Eu3+薄膜,薄膜的最佳激发波长为265nm,Eu3+的最佳掺杂浓度为10mol%,在265nm光激发下,最强的发射峰出现在617nm附近;采用溶胶-凝胶法制备得到Al2O3:Eu3+薄膜表面致密、平整且无裂纹产生,表面粗糙度约为1.4nm,有利于硅基光电子器件的制备和应用。Eu3+-doped Al2O3 films on silicon substrates were prepared by the sol-gel method. The Eu3+-doped Al2O3 films were characterized by differential thermal analysis/thermogravimetric analysis, X-ray diffraction, scanning electron microscope, atomic force microscope and photoluminescence spectra as well. The photoluminescence mechanism of Eu3+-doped Al2O3 films was analyzed. The effects of heat-treating temperature and Eu3+ ion concentration on the luminescence property of Al2O3:Eu3+ films were discussed. The results show that the prepared Al2O3:Eu3+ films have high luminescence intensity, the optimum excitation wavelength is 265 nm, the optimum concentration of Eu3+dopant is 10 mol%, and the main emission is at 617 nm under excitation of 265 nm. The prepared Al2O3:Eu3+ film has a dense, smooth and crack-free surface texture with a roughness less than 1.4 nm. It is concluded that the film is good enough for fabrication and application of silicon based photoelectronic devices.

关 键 词：溶胶-凝胶法 Al2O3:Eu3+ 薄膜 光致发光 

分 类 号：O648.16[理学—物理化学]