Ferroelectric properties of Bi_(3.25)La_(0.75)Ti_(3)O_(12) thin films prepared by sol-gel method  

作　　者：GUO DongYun1, LI MeiYa1, PEI Ling1, YU BenFang1, WU GengZhu1, ZHAO XingZhong1, WANG YunBo2 & YU Jun2 1 Department of Physics, Wuhan University, Wuhan 430072, China 2 Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China 

出　　处：《Science China(Technological Sciences)》2007年第1期1-6,共6页中国科学（技术科学英文版）

基　　金：the Natural Science Foundation of Hubei Province (Grant Nos. 2003ABA061, 2004ABA082)

摘　　要：The Bi3.25La0.75Ti3O12 thin films were fabricated on the Pt/Ti/SiO2/Si substrates using sol-gel method. The structure and morphology of the films were characterized us-ing X-ray diffraction and atomic force microscopy. The thin films showed a perov- skite phase and dense microstructure. The 2Pr and 2Vc of the Bi3.25La0.75Ti3O12 thin films annealed at 700℃ were 18.6 μC/cm2 and 4.1 V, respectively, under an applied voltage 10 V. After the switching of 1×1010 cycles, the Pr value decreased to 90% of its pre-fatigue values. The films showed good insulating behavior according to the test of leakage current. The dielectric constant and the dissipation factor of the Bi3.25La0.75Ti3O12 thin films were about 176 and 0.046 at 1 kHz, respectively.The Bi3.25La0.75Ti3O12 thin films were fabricated on the Pt/Ti/SiO2/Si substrates using sol-gel method. The structure and morphology of the films were characterized us-ing X-ray diffraction and atomic force microscopy. The thin films showed a perov- skite phase and dense microstructure. The 2Pr and 2Vc of the Bi3.25La0.75Ti3O12 thin films annealed at 700℃ were 18.6 μC/cm2 and 4.1 V, respectively, under an applied voltage 10 V. After the switching of 1×1010 cycles, the Pr value decreased to 90% of its pre-fatigue values. The films showed good insulating behavior according to the test of leakage current. The dielectric constant and the dissipation factor of the Bi3.25La0.75Ti3O12 thin films were about 176 and 0.046 at 1 kHz, respectively.

关 键 词：Bi3.25La0.75Ti3O12 THIN film SOL-GEL method FERROELECTRIC properties FATIGUE LEAKAGE current 

分 类 号：TB383.2[一般工业技术—材料科学与工程]