ZnO外延薄膜的制备及孪晶的形成  

Epitaxial Growth of ZnO Films and the Form of the Twin Domains

作　　者：许贺菊[1] 高永春[1] 侯淑莲[1] 张久云[1] 张丽[2] 于威[2] 

机构地区：[1]华北煤炭医学院,河北唐山063000 [2]河北大学物理科学与技术学院,河北保定071002

出　　处：《唐山师范学院学报》2009年第2期52-54,共3页Journal of Tangshan Normal University

基　　金：河北省自然科学基金(E2006001006)

摘　　要：采用螺旋波等离子体辅助溅射沉积法在衬底Al2O3的(0001)面上沉积ZnO薄膜,所生长的薄膜在未退火和退火时表现出不同的平面内取向。未退火时薄膜表现出较好的单筹异质外延生长,而退火后薄膜的Φ扫描图像中出现了12个峰,这表明退火后薄膜出现反相筹,表现为孪晶生长。重点分析了退火对螺旋波等离子体辅助溅射技术外延ZnO薄膜的结构及表面形貌的影响规律,为外延ZnO薄膜质量的提高及该技术应用的探索奠定基础。Abstract： The epitaxial ZnO films are prepared on Al2O3 substrates by using helicon wave plasma assisted sputtering technique. The as-grown and annealed films showed different in-plane orientations. The as-grown showed the single domain heterogeneous epitaxial growth, but the Ф scan of the annealed showed 12 reflections, and orientation-domain boundaries appeared after annealing. The influence behavior of the structure and AFM images of the epitaxial ZnO films by annealing were analysised. It established the base for the improving of the quality of the epitaxial ZnO films and the investigation of the technical application.

关 键 词：外延ZnO薄膜 退火 孪晶 等离子体 

分 类 号：O484.1[理学—固体物理]