Magnetic tunnel junctions (MTJs)  

作　　者：Haili Bai Enyong Jiang 

机构地区：[1]Tianjin Univ, Dept Appl Phys, Tianjin 300072, Peoples R China

出　　处：《Chinese Science Bulletin》2001年第9期709-716,共8页

基　　金：This work was supported by the National Natural Science Foundation of China (Grant No. 59801006); the Key Teachers Supporting Project (Grant No. G00032); and the Starting Foundation for Returned Researchers (Grant No. B29904) of the National Education

摘　　要：We review the giant tunnel magnetoresistance (TMR) in ferromagnetic-insulator-ferromagnetic junctions discovered in recent years, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal films separated by an insulating thin tunnel barrier. The theoretical and experimental results including junction conductance, magnetoresistance and their temperature and bias dependences are described.We review the giant tunnel magnetoresistance (TMR) in ferromagnetic-insulator-ferromagnetic junctions discovered in recent years, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal films separated by an insulating thin tunnel barrier. The theoretical and experimental results including junction conductance, magnetoresistance and their temperature and bias dependences are described.

关 键 词：FERROMAGNETIC metal/insulator/ferromagnetic METAL JUNCTIONS spin-dependent TUNNELING spin polarization magnetoresis-tance. 

分 类 号：O482.5[理学—固体物理]