Magnetic properties and tunneling magnetoresistance in FeCo-SiO_2 granular films  

作　　者：XI Li, ZHANG Zongzhi, CHI Junhong, LI Chengxian & GE ShihuiKey Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, China 

出　　处：《Chinese Science Bulletin》2001年第9期734-737,共4页

基　　金：This work was supported by the National Natural Science Foundation of China (Grant No. 59971023).

摘　　要：Fefv(SiO2)1-fv granular films were fabricated by rf sputtering (fv represents the Fe volume fraction). The mi-crostructure, magnetic properties as well as the tunneling magnetoresistance effect (TMR) were systematically studied. It was found that the maximum TMR ratio is about -3.3% at fv = 0.33. Under the same condition, a series of (Fe100-x Cox)0.33(SiO2)0.67 were prepared. TMR value reaches -4.5% at x=53, while the microstructure of the film still keeps as that of Fe0.33(SiO2)0.67. The higher TMR ratio is contributed to the elevating of the spin polarization of particles. This is consistent with Inoue’s theory.Fefv(SiO2)1-fv granular films were fabricated by rf sputtering (fv represents the Fe volume fraction). The mi-crostructure, magnetic properties as well as the tunneling magnetoresistance effect (TMR) were systematically studied. It was found that the maximum TMR ratio is about -3.3% at fv = 0.33. Under the same condition, a series of (Fe100-x Cox)0.33(SiO2)0.67 were prepared. TMR value reaches -4.5% at x = 53, while the microstructure of the film still keeps as that of Fe0.33(SiO2)0.67. The higher TMR ratio is contributed to the elevating of the spin polarization of particles. This is consistent with Inoue's theory.

关 键 词：TUNNELING MAGNETORESISTANCE GRANULAR films. 

分 类 号：O484.43[理学—固体物理]