The PL "violet shift" of cerium dioxide on silicon  

作　　者：Chai Chunlin Yang Shaoyan Liu Zhikai Liao Meiyong Chen Nuofu Wang Zhanguo 

机构地区：[1]Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

出　　处：《Chinese Science Bulletin》2001年第24期2046-2048,共3页

基　　金：This work was supported by the Special Fund for the Major State Basic Research Project (Grant No. G200(X)36505).

摘　　要：CeO2 thin film was fabricated by dual ion beam epitaxial technique. The phenomenon of PL violet shift at room temperature was observed, and the distance of shift was about 65 nm. After the analysis of crystal structure and valence in the compound were carried out by XRD and XPS technique, it was concluded that the PL shift was related with valence of cerium ion in the oxides. When the valence of cerium ion varied from tetravalence to trivalence, the PL peak position would move from blue region to violet region and the phenomenon of 'violet shift' was observed.CeO2 thin film was fabricated by dual ion beam epitaxial technique. The phenomenon of PL violet shift at room temperature was observed, and the distance of shift was about 65 nm. After the analysis of crystal structure and valence in the compound were carried out by XRD and XPS technique, it was concluded that the PL shift was related with valence of cerium ion in the oxides. When the valence of cerium ion varied from tetravalence to trivalence, the PL peak position would move from blue region to violet region and the phenomenon of “violet shift” was observed.

关 键 词：CERIUM dioxide THIN FILM PL VIOLET shift. 

分 类 号：O614[理学—无机化学]