Growth of AgGaS_2 single crystal by descending crucible with rotation method and observation of properties  

作　　者：ZHAO Beijun, ZHU Shifu, LI Zhenghui, YU Fengliang, ZHU Xinghua & GAO DeyouDepartment of Materials Science, Sichuan University, Chengdu 610064, China 

出　　处：《Chinese Science Bulletin》2001年第23期2009-2013,共5页

基　　金：This work was supported by the Sichuan Provincial Research Foundation of of China (Grant No: 99-479).

摘　　要：This note reports a new procedure of polycrystalline synthesis and a new technique of single crystal growth on AgGaS2, i.e. two-zone temperature oscillation vapor transporting and descending crucible with rotation. A single phase dense AgGaS2 polycrystalline ingot was synthesized, and a crack-free AgGaS2 single crystal with 15 mm in diameter and 30 mm in length was grown by the techniques mentioned above. Structure integrity of the crystal was studied by the X-ray diffraction technique. Six order X-ray spectra from the {011} face of the crystal were obtained, and an anomalous phenomenon was observed for the first time that intensity of the higher order diffraction peak is much stronger than that of the lower order diffraction peak. Etch-pits of the crystal were observed by the scanning electron microscopy (SEM).This note reports a new procedure of polycrystalline synthesis and a new technique of single crystal growth on AgGaS2, i.e. two-zone temperature oscillation vapor transporting and descending crucible with rotation. A single phase dense AgGaS2 polycrystalline ingot was synthesized, and a crack-free AgGaS2 single crystal with 15 mm in diameter and 30 mm in length was grown by the techniques mentioned above. Structure integrity of the crystal was studied by the X-ray diffraction technique. Six order X-ray spectra from the {011} face of the crystal were obtained, and an anomalous phenomenon was observed for the first time that intensity of the higher order diffraction peak is much stronger than that of the lower order diffraction peak. Etch-pits of the crystal were observed by the scanning electron microscopy (SEM).

关 键 词：infrared nonlinear CRYSTAL AGGAS2 polycrystalline syn-thesis CRYSTAL GROWTH X-ray diffraction etch-pits observation. 

分 类 号：O78[理学—晶体学]