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作 者:Yu Guanghua Zhao Hongchen Zhu Fengwu
机构地区:[1]Univ Sci & Technol Beijing, Dept Mat Phys, Beijing 100083, Peoples R China
出 处:《Chinese Science Bulletin》2001年第20期1681-1685,共5页
基 金:This work was supported by the National Natural Science Foundation of China (Grant No. 19890310).
摘 要:In view of the principle of glow-discharge, ul-trathin Ni81Fe19(12 nm) films were prepared at an ultrahigh base vacuum. The anisotropic magnetoresistance coefficient (△R/R%) for Ni81Fe19(12 nm) film reaches 1.2%, while the value of its coercivity is 127 A/m (i.e. 1.6 Oe). Ultrathin Ni81Fe19(12 nm) films were also prepared at a lower base vacuum. The comparison of the structure for two kinds of films shows that the films prepared at an ultrahigh base vacuum have a smoother surface, a denser structure with a few defects; the films prepared at a lower base vacuum have a rougher surface, a porouser structure with some defects.In view of the principle of glow-discharge, ultrathin Ni81Fe19(12 nm) films were prepared at an ultrahigh base vacuum. The anisotropic magnetoresistance coefficient (ΔR/R %) for Ni81Fe19(12 nm) film reaches 1.2%, while the value of its coercivity is 127 A/m (i.e. 1.6 Oe). Ultrathin Ni81Fe19(12 nm) films were also prepared at a lower base vacuum. The comparison of the structure for two kinds of films shows that the films prepared at an ultrahigh base vacuum have a smoother surface, a denser structure with a few defects; the films prepared at a lower base vacuum have a rougher surface, a porouser structure with some defects.
关 键 词:NIFE film ANISOTROPIC MAGNETORESISTANCE COERCIVITY structure.
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