EMISSION CHARACTERISTICS OF ORGANIC LIGHT-EMITTING DIODES WITH A HETEROSTRUCTURE OF DYE DOPED POLY(N-VINYLCARBAZOLE)/TRIS(8-HYDROXYQUINOLINE) ALUMINUM  

作　　者：邱勇 

机构地区：[1]Department of Chemistry. Tsinghua University, Beijing 100084, China

出　　处：《Chinese Journal of Polymer Science》1999年第4期337-342,共6页高分子科学（英文版）

基　　金：This work was supported by the National Natural Science Foundation of China(No.59790050-08)and the Youth Foundation of Tsinghua University.

摘　　要：Organic electroluminescent diodes with a heterostructure of 9,10-bis(phenylethnyl) anthracene (BPEA) doped poly(N-vinylcarbazole) (PVK)/tris(8-hydroxyquinoline)aluminum (Alq(3)) have been fabricated. The electroluminescence (EL) both from BPEA and Alq(3) were observed when the Alq(3) layer is thin enough. With increasing thickness of the Alq(3) layer, the relative emission intensity of BPEA is gradually decreased. For the thin Alq(3) layer structure, the light emission of Alq(3) becomes more dominant as the applied voltage increases. It is proposed that the electron-hole recombination takes place in both PVK and Alq(3) films. The field-induced quenching theory has also been applied to explain the change of the EL spectra with applied voltage.Organic electroluminescent diodes with a heterostructure of 9,10-bis(phenylethnyl) anthracene (BPEA) doped poly(N-vinylcarbazole) (PVK)/tris(8-hydroxyquinoline)aluminum (Alq(3)) have been fabricated. The electroluminescence (EL) both from BPEA and Alq(3) were observed when the Alq(3) layer is thin enough. With increasing thickness of the Alq(3) layer, the relative emission intensity of BPEA is gradually decreased. For the thin Alq(3) layer structure, the light emission of Alq(3) becomes more dominant as the applied voltage increases. It is proposed that the electron-hole recombination takes place in both PVK and Alq(3) films. The field-induced quenching theory has also been applied to explain the change of the EL spectra with applied voltage.

关 键 词：ELECTROLUMINESCENCE poly(N-vinylcarbazole) electron transport hole transport 

分 类 号：TN312.8[电子电信—物理电子学]