扫描电镜电子通道衬度技术研究铜双晶体循环饱和位错组态  

Cyclic Saturation Dislocation Pattern Observation in a Copper Bicrystal by SEM ECC Technique

作　　者：张哲峰[1] 王中光[1] 苏会和[1] 

机构地区：[1]中国科学院金属研究所材料疲劳与断裂国家重点实验室

出　　处：《应用基础与工程科学学报》1998年第3期57-61,共5页Journal of Basic Science and Engineering

基　　金：国家自然科学基金

摘　　要：通过对垂直晶界［５９１３］⊥［５７９］铜双晶体进行循环变形，借助于扫描电镜电子通道衬度技术研究了组元晶体及晶界附近的循环饱和位错组态，结果表明两个组元晶体的表面滑移程度不同，两个组元晶体中的循环饱和位错组态也明显不同，驻留滑移带只能在组元晶体Ｇ１中形成，驻留滑移带能够到达晶界但不能穿过晶界．讨论了组元晶体取向对双晶体的表面滑移形貌及饱和位错组态的影响以及驻留滑移带与晶界的交互作用．The cyclic saturation dislocation patterns within grains and near grain boundary (GB) were investigated in a copper bicrystal with a perpendicular by SEM ECC technique. It was found that slip morphology and saturation dislocation patterns within the component crystal G1 and G2 are obviously different. Persistent slip bands (PSBs) can only form in the grain G1 with a relatively higher Schmid factor. The PSBs can reach the GB, but cannot transfer through the GB continuously and the ends of those PSBs were affected in the vicinity of the GB. In the end, the effect of component crystal orientations on the surface slip and saturation dislocation patterns and the interactions of PSBs with GB were discussed.

关 键 词：铜双晶体 扫描电镜电子通道衬度技术 位错组态 

分 类 号：O614.121[理学—无机化学]