Analysis of the One Dimensional Steady State Semiconductor Multijunction Device Model with the Avalanche Effect *  

具雪崩效应一维半导体稳态多结器件的分析(英文)

作　　者：边永新 王元明[1] 

机构地区：[1]东南大学应用数学系

出　　处：《Journal of Southeast University(English Edition)》1998年第1期127-133,共7页东南大学学报（英文版）

摘　　要：In this paper we consider the stationary multijunction device model with the avalanche effect. Using the singular perturbation method, an approximation to the current voltage curve is obtained. The cause and the condition for the occurrence of saturation current is analyzed. Especially, it is pointed that the avalanche effect is responsible for the blowing up of the saturation current. We prove the existence of multiple steady state solution when the ionization rate is relatively small. Finally, some numerical examples are presented to show the reliability of the theoretical results.我们考虑了具雪崩效应的稳态多结的半导体器件模型．利用奇异摄动方法获得了电流—电压近似曲线并分析了饱和电流产生的缘因和条件．特别是，我们指出了雪崩效应是造成饱和电流爆破的原因．同时，我们还证明了与离化率适当小时存在多个稳态解并给出几个数值例子以说明理论结果的可靠性．

关 键 词：singular perturbations SEMICONDUCTOR nonlinear differential equation SIMULATION 

分 类 号：TN389[电子电信—物理电子学]