A new interface crystal orientation relationship in a SiCw/Al composite  

作　　者：耿林 姚忠凯 李齐 王路春 

机构地区：[1]Department of Metals and Technology, Harbin Institute of Technology, Harbin 150001, China [2]Department of Physics, Nanjing University, Nanjing 210008, China

出　　处：《Chinese Science Bulletin》1995年第1期37-40,共4页

基　　金：Project supported by the National Natural Science Foundation of China

摘　　要：SiC whisker reinforced aluminium alloy (SiCw/Al) composite is a kind of advanced material with high properties, and has been extensively studied since the 1980’s. Many researches have shown that the high SiC-Al interface bond strength is the main reason for the high strength and modulus of the SiCw/Al composites. In the SiCw/Al composites made by powder metallurgy, there is no reaction in the SiC-Al interfaces, but there is element diffusion, so it is concluded that the diffusion bonding is the main reason for the high SiC-Al interface bond strength in the SiCw/Al composites. However, the study

关 键 词：SILICON CARBIDE aluminium COMPOSITE interface. 

分 类 号：TB331[一般工业技术—材料科学与工程]