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出 处:《Chinese Science Bulletin》1995年第4期340-344,共5页
基 金:Research performed under the auspices of the Natural Scientific Foundation of Shanghai
摘 要:The rapid development of ultralarge-scale integration demands integrated devices from ordinary 1-dimensional integrated devices to 3-dimensional devices and multi-function devices. Because of its non-volatility and radiation-hardness, very large (~1000) dielectric constant and polarizability, ferroelectric thin film and its application research have recently attracted great attention in newly functional materials and integrated devices such
关 键 词:PZT PULSED laser DEPOSITION (PLD) FERROELECTRIC thin film.
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