Study on Relationship between InGaAsP/InP LPE Wafer Morphology,Interface Property and Device Characteristics  

作　　者：Li, Weidan  Fu, Xiaomei  Pan, Huizhen 

机构地区：[1] Shanghai Inst of Metalurgy, China

出　　处：《Rare Metals》1989年第2期43-48,共6页稀有金属（英文版）

摘　　要：Five kinds of InGaAsP/InP heterostructure materials grown with LPE have been measured by means of Auger electron analysis, X-ray double-crystal diffraction, selective etching and surface morphology analysis. The relation between crystal mismatch and interface property of such materials has been studied and the results could be understood in terms of the growth kinetics at the heterojunction interface. The comparison of the characteristics of the electronic and optoelectronic devices fabricated with the wafers under different interface properties has been carried out. And it also has been demonstrated that the wafer surface morphology changes with the compositional gradation in a certain relationship.Five kinds of InGaAsP/InP heterostructure materials grown with LPE have been measured by means of Auger electron analysis, X-ray double-crystal diffraction, selective etching and surface morphology analysis. The relation between crystal mismatch and interface property of such materials has been studied and the results could be understood in terms of the growth kinetics at the heterojunction interface. The comparison of the characteristics of the electronic and optoelectronic devices fabricated with the wafers under different interface properties has been carried out. And it also has been demonstrated that the wafer surface morphology changes with the compositional gradation in a certain relationship.

关 键 词：Semiconducting Indium Compounds MORPHOLOGY Semiconductor Devices HETEROJUNCTIONS Semiconductor Diodes  Light Emitting MANUFACTURE Spectroscopy  Auger Electron Applications Transistors  Photosensitive MANUFACTURE 

分 类 号：TG146.4[一般工业技术—材料科学与工程]