超高真空下清洁硅表面二次离子质谱的研究  

SIMS STUDIES OF CLEAN SILICON SURFACES UNDER ULTRAHIGH VACUUM

作　　者：查良镇[1] 阿诺德 巴赫尔 

机构地区：[1]清华大学无线电电子学系 [2]拉瓦尔大学原子分子研究中心

出　　处：《真空科学与技术学报》1989年第4期218-224,共7页Chinese Journal of Vacuum Science and Technology

摘　　要：超高真空下keV能量一次氩离子轰击下清洁硅表面二次离子发射的实验研究是二次离子质谱(SIMS)最重要的一种基础研究,它不仅可以支持分析应用,还可用于检验某些理论发射模型。尽管有许多作者开展了这项研究并已取得了一些重要的研究成果,但重复可靠和系统的研究尚不多见。本文收集、比较并评述了迄今为止已发表的主要实验研究结果,讨论了为得到重复可靠实验结果遇到的主要困难。在改善的实验条件下对超高真空下清洁硅表面二次离子质谱进行了系统的实验研究。本文将介绍主要研究结果并进行一些讨论。Experimental study of secondary ion emission from a clean silicon surface bombarded with a primary argon ion beam in the keV energy range under ultrahigh vacuum(UHV) is one ofthe most important fundamental works for secondary ion mass spectrometry (SIMS). It can be used to support the analytical application and to check the validity of certain emission models. Although SIMS spectra from clean silicon surfaces have been studied by many authors and some important experimental results have been obtained but systematic and reliable experimental studies are still meager. In this investigation the main experimental results published up to now have been collected. compared and eritically reviewed. In order to get reliable experimental results the main difficulties have been discussed. A series of experimental studies on secondary ion mass spectra from clean silicon surfaces under UHV have been done under improxed experimental conditions. An overview of the main experimental results and a brief discussion are presented in this paper.

关 键 词：硅表面 质谱图 离子发射 原子数 SIMS 基础研究 离子分析 氧离子 氩离子 研究成果 

分 类 号：TB7-55[一般工业技术—真空技术]