低维导电型磺化酞青铜L-B膜导电机理研究  

The Study of Conductivity Mechanism on Low Dimension Conductive CuTSPc

作　　者：吴宗汉[1] 周刚[1] 唐金花[1] 朱明[2] 李铁津 

机构地区：[1]东南大学 [2]吉林大学

出　　处：《传感技术学报》1989年第4期9-21,共13页Chinese Journal of Sensors and Actuators

摘　　要：本文用分子激子理论算出了CuTSPc L-B膜中为二聚体-二聚体结构构型,进而在分子轨道理论基础上,对CuTSPc L-B膜导电机理进行了详尽的分析,提出了导电圆盘模型,并用此模型来解释有关问题。此外,本文还报导了用渗碘工艺对L-B膜进行碘化处理,首次制备了具有室温金属型导电率的纵向准一维CuTSPCIx的L-B膜,这为分子导线的制备提供了又一途径。The L-B film is a kind of special man-made condensed matter system formed by interaction among molecules. The molecules of L-B film display an orderly quasi-crystalline array, and the L-B film present the function of molecules and and their assembly system on molecular level. Thus, it was extensively studied and has wide prospcction of application. This paper presented conductive mechanism on CuTSPc belonging HPC in detail by means of exciton theory, and intronduced conductive disk model. In according to this model, bond in CuTSPc is molecular skeleton, electron cloud overlap could be largely contributed to longitudinal conductivity. The caculation by qvantum mechanics gave the distance 3.945A between layers which is as consistent wheat with the experimental value. In order to raise lorgitudinal conductivity of CuTSPc, the CuTSPcI conductive film was prepared by using iodine-doped treatment. The longitudinal cond- tivity was rased to five order of magnitude. This method showed possibility of new preparation method of molecular wire on electronic molecuie devices.

关 键 词：磺化钛菁铜 电导 L-B膜 

分 类 号：TP212-55[自动化与计算机技术—检测技术与自动化装置]