非制冷980nm半导体激光器封装设计与热特性分析  

Design and Thermal Characteristics Analysis of Uncooled 980 nm Semiconductor Laser Packaging

作　　者：武斌[1] 李毅[1] 胡双双[1] 蒋群杰[1] 王海方[1] 

机构地区：[1]上海理工大学光学与电子信息工程学院,上海200093

出　　处：《中国激光》2009年第4期799-803,共5页Chinese Journal of Lasers

基　　金：国家863计划(2006AA03Z348);教育部科学技术研究重点项目(207033);上海市科学技术委员会科技攻关计划项目(06DZ11415);上海市教委科学技术研究重点项目(06ZZ32)资助课题

摘　　要：针对非制冷980 nm半导体激光器组件的封装结构,对采用倒装贴片封装的激光器模块内部芯片外延层、热沉和焊料层进行了优化设计,运用有限元法(FEM)对微型双列直插(mini DIL)非制冷980 nm半导体激光器在连续波(CW)驱动条件下的热场分布进行了模拟计算。对比了倒装贴片和正装贴片的激光器热特性,并对实际封装的激光器光电性能进行了测试。倒装贴片型非制冷980 nm半导体激光器的输出光谱在0～70℃时中心波长漂移仅为0.2 nm,半峰全宽(FWHM)小于1.6 nm.边模抑制比(SMSR)保持在45 dB以上,最大出纤功率达200 mW。研究结果表明,倒装贴片的非制冷980 nm半导体激光器在热稳定性和光电性能方面都有较大提高,能够满足高性能小型化掺铒光纤放大器对非制冷980 nm半导体激光器的性能要求。According to the packaging structure of uncooled 980 nm semiconductor laser module, the chip epitaxial layer, heat sink and solder layer in the epitaxy （epi）-down bonded lasers module were designed, and the heat distribution of mini-dual in line （DIL） uncooled 980 nm semiconductor laser under the continuous-wave （CW） drive conditions was simulated using the finite element method （FEM）. The thermal properties of epi-down and epi-up bonded lasers were compared, and the photoelectric properties of actual laser module were tested. Epi-down bonded uncooled 980 nm semiconductor laser can work steadily over a wide temperature range of 0--70 ℃ , with a small wavelength shift of 0.2 nm, full-width at half-maximum （FWHM） less than 1.6 nm, side-mode suppression ratio （SMSR） of more than 45 dB, and a high optical power of 200 mW. The results show that the optical and thermal characteristics of epi-down bonded uncooled 980 nm semiconductor laser have been greatly improved, and it can meet the need of high-performance miniature erbium-doped fiber amplifier.

关 键 词：激光器 980 nm半导体激光器 倒装贴片 热特性 有限元 

分 类 号：TN248.4[电子电信—物理电子学]