Electrical Characteristics of MOS Capacitors with HfTiON as Gate Dielectric  

作　　者：徐静平 

机构地区：[1]School of Computer and Communication, Hunan University of Technology [2]Department of Electronic Science & Technology, Huazhong University of Science and Technology

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2009年第1期57-60,共4页武汉理工大学学报（材料科学英文版）

基　　金：Funded by the National Natural Science Foundation of China (NSFC, No. 60376019)

摘　　要：HfTiN film was deposited by co-reactive sputtering and then was annealed in dif-ferent gas ambients at temperature of 650 ℃ for 2 min to form HfTiON film. Capacitance-voltage and gate-leakage characteristics were investigated. The N2O-annealed sample exhibited small inter-face-state and oxide-charge densities, and enhanced reliability, which was attributed to the fact that nitridation could create strong Si≡N bonds to passivate dangling Si bonds and replaced strained Si-O bonds, thus forming a hardened dielectric/Si interface with high reliability. As a result, it is possible to prepare high-quality HfTiON gate dielectric of small-scaling CMOS devices in the industry-preferred N2O environment.HfTiN film was deposited by co-reactive sputtering and then was annealed in dif-ferent gas ambients at temperature of 650 ℃ for 2 min to form HfTiON film. Capacitance-voltage and gate-leakage characteristics were investigated. The N2O-annealed sample exhibited small inter-face-state and oxide-charge densities, and enhanced reliability, which was attributed to the fact that nitridation could create strong Si≡N bonds to passivate dangling Si bonds and replaced strained Si-O bonds, thus forming a hardened dielectric/Si interface with high reliability. As a result, it is possible to prepare high-quality HfTiON gate dielectric of small-scaling CMOS devices in the industry-preferred N2O environment.

关 键 词：high-k gate dielectric HfTiON co-reactive sputter gate-leakage current 

分 类 号：TN386[电子电信—物理电子学]