弱界面ZnO-SiO_2-Si压电层合结构中的Love波  

Love Waves in ZnO-SiO2-Si Piezoelectric Layered Structures with Imperfect Interfaces

作　　者：彭飞[1] 胡时岳[1] 

机构地区：[1]西安交通大学,西安710049

出　　处：《应用力学学报》2009年第1期55-59,共5页Chinese Journal of Applied Mechanics

摘　　要：建立了考虑弱连接界面特性的传递矩阵,基于状态空间法分析了弱界面压电层合结构中Love波的传播特性,揭示了ZnO-SiO2-Si层间的弱界面位置和特性对Love波相速度的影响,研究发现频率较高的第零阶Love波对靠近表面的弱界面更敏感,当频率趋于零和无穷时,弱界面的特性和位置对Love波第零阶的相速度没有影响。第一阶Love波的相速度在截断频率附近受弱界面影响相对显著,当频率趋于无穷时,弱界面的特性和位置对Love波第一阶的相速度影响越来越小。The transfer matrix for imperfect interface conditions and state space method are considered to analyze Love waves in a piezoelectric multilayered structure with imperfect interfaces,and the effects of the location and property of the imperfect interface on the phase velocity of Love waves in the structure.The interface spring shear model was employed to describe the property of the imperfect interface.It is found that the lowest-order Love wave for higher frequency is relatively sensitive to the imperfect interface near the surface of the ZnO-SiO2-Si piezoelectric layered structure.As the frequency approaches to zero or infinite,the phase velocity of the lowest-order Love wave is irrelevant to the imperfect interface.The imperfect interface has relatively prominent influence on the first-order Love wave in the vicinity of the cut-off frequency,and this effect becomes negligible as the frequency approaches to infinite.

关 键 词：弱界面 LOVE波 状态空间法 

分 类 号：O347.3[理学—固体力学]