VO_2薄膜的制备及其喇曼光谱研究  

Preparation of Vanadium Dioxide Thin Films and Its Raman Spectrum

作　　者：李雪婧[1] 那延祥[1] 冯克成[1] 

机构地区：[1]长春理工大学理学院,长春130022

出　　处：《长春理工大学学报（自然科学版）》2009年第1期146-149,共4页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：国家电力公司东北公司长春超高压局资助项目(JG0713)

摘　　要：介绍VO2薄膜的结构、性质并采用射频磁控溅射法分别在玻璃、熔融石英以及蓝宝石衬底上沉积了高品质的VO2薄膜,利用X射线衍射仪(XRD)分析了VO2薄膜的微结构,探索了非理想配比对VO2薄膜的喇曼光谱的影响,讨论了非理想配比导致VO2薄膜喇曼光谱变化的原因。In this paper, the structure and nature of VO2 thin films were introduced, and high quality VO2 thin filmswere deposited on glass, fused silica and sapphire of substratres by the methods of RF magnetron sputtering,The microstructures of VO： thin films were studied with XRD. Influence ofnonstoichiometry on Raman scattering of VO2 films was also analyzed, The experimental evidence is presented and the reason for nonstoichiometry dependence on Raman spectra of VO2 films is discussed.

关 键 词：VO2薄膜 射频磁控溅射 喇曼光谱 非理想配比 

分 类 号：O484.4[理学—固体物理]