Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH  

作　　者：季涛 杨利成 李海蓉 何山虎 李思渊 

机构地区：[1]School of Fundamental Studies, Shanghai University of Engineering Science [2]Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University

出　　处：《Journal of Semiconductors》2009年第4期43-46,共4页半导体学报（英文版）

基　　金：supported by the Training of Outstanding Young Teachers Project in Colleges in Shanghai (No. gjd-07037)

摘　　要：Influences of light irradiation on the negative resistance turn-around characteristics of static induction photosensitive thyristor （SIPTH） have been experimentally and theoretically studied. As the gate current of SIPTH is increased by the light irradiation, the potential barrier in the channel is reduced due to the increase in voltage drop across the gate series resistance. Therefore, SIPTH can be quickly switched from the blocking state to the conducting state by relatively low anode voltage. The optimal matching relation for controlling anode conducting voltage of SIPTH by light irradiation has also been represented.Influences of light irradiation on the negative resistance turn-around characteristics of static induction photosensitive thyristor （SIPTH） have been experimentally and theoretically studied. As the gate current of SIPTH is increased by the light irradiation, the potential barrier in the channel is reduced due to the increase in voltage drop across the gate series resistance. Therefore, SIPTH can be quickly switched from the blocking state to the conducting state by relatively low anode voltage. The optimal matching relation for controlling anode conducting voltage of SIPTH by light irradiation has also been represented.

关 键 词：static induction photosensitive thyristors gate series resistance double injection effect potential barrier light-generated carriers 

分 类 号：TN34[电子电信—物理电子学]