Design procedure for optimizing CMOS low noise operational amplifiers  

作　　者：李志远 叶以正 马建国 

机构地区：[1]Microelectronics Center, Harbin Institute of Technology

出　　处：《Journal of Semiconductors》2009年第4期90-94,共5页半导体学报（英文版）

摘　　要：This paper presents and experimentally verifies an optimized design procedure for a CMOS low noise operational amplifier. The design procedure focuses on the noise performance, which is the key requirement for low noise operational amplifiers. Based on the noise level and other specifications such as bandwidth, signal swing, slew rate, and power consumption, the device sizes and the biasing conditions are derived. In order to verify the proposed design procedure, a three-stage operational amplifier has been designed. The device parameters obtained from the proposed design procedure closely agree with the simulated results obtained by using HSPICE.This paper presents and experimentally verifies an optimized design procedure for a CMOS low noise operational amplifier. The design procedure focuses on the noise performance, which is the key requirement for low noise operational amplifiers. Based on the noise level and other specifications such as bandwidth, signal swing, slew rate, and power consumption, the device sizes and the biasing conditions are derived. In order to verify the proposed design procedure, a three-stage operational amplifier has been designed. The device parameters obtained from the proposed design procedure closely agree with the simulated results obtained by using HSPICE.

关 键 词：design procedure noise operational amplifier optimize 

分 类 号：TN722[电子电信—电路与系统]