C-SiC-B_4C复合材料的非等温氧化  

THE ANISOTHERMAL OXIDATION OF C-SiC-B_4C COMPOSITES

作　　者：张伟刚[1] 成会明[1] 沈祖洪[1] 周本濂 

机构地区：[1]中国科学院金属研究所,沈阳110015 [2]国际材料物理中心

出　　处：《炭素技术》1998年第2期6-9,共4页Carbon Techniques

基　　金：国家自然科学基金!59402006

摘　　要：研究B4C／SiC值不同的三种C－SiC－B4C复合材料在非等温氧化过程中的失重／增重行为。发现B4C／SiC值不同．复合材料的氧化行为有较大差异．当B4C／SiC值为0．2时，复合材料在773～1573K的实验温度区间内表现为净失重；当B4C／SiC值为0．4和0．6时，则在不同的温度区间出现不同程度的增重现象，B4C／SiC值越大，增重越明显；高温（1473K以上）氧化时，B4C／SiC值越大则氧化速率越大。SEM观察到复合材料氧化后．表面生成完整或部分完整的氧化物玻璃保护层，其完整程度大致与复合材料的氧化失重结果相一致。The mass loss and mass gain behavior during anisothermal oxidation of three kinds of C-SiC-B4C composites with the varieties of B4C/SiC ratio was studied in the paper. It was found that the oxidation behavior changed drasitically with the ratios, such as the ratio was 0. 2, only mass loss took place; On the conditions of the ratios being 0. 4 and 0. 6, mass gain for the composites was observed during different temperature scope, and it decreased as the ratio increased. However, the mass loss rate during oxidation at the temperature above 1400K increased as the ratio become greater. Protective glass layers were also observed on the surface of the composites after oxidation by SEM investigation, the morphologics of the glass layer agreed with the results given by TG results.

关 键 词：复合材料 非等温氧化 陶瓷 炭材料 氧化 

分 类 号：TB332.03[一般工业技术—材料科学与工程]