用TMOS为原料合成Zn_2SiO_4∶Mn^(2+)荧光粉的工艺研究  

Study on technological process of Zn_2SiO_4∶Mn^(2+) phosphor by using TMOS as raw material

作　　者：赵鹏[1] 曾一[1] 

机构地区：[1]长安大学材料学院,陕西西安710054

出　　处：《应用化工》2009年第3期313-315,324,共4页Applied Chemical Industry

基　　金：国家自然科学基金项目(50472028)

摘　　要：采用四甲氧基硅(TMOS)、硝酸锌和硝酸锰为原料,用sol-gel法合成了Zn2SiO4∶Mn2+荧光粉。XRD分析确定试样均为a-Zn2SiO4晶体结构。利用荧光分析测定试样的发射光谱和激发光谱,分析了所合成的Zn2SiO4∶Mn2+荧光粉材料发光强度,最强峰位等与初始原料用量、Mn2+粒子取代Zn2+程度、热处理温度等的相互关系,结果显示,首先采用TMOS过量1%的配比;其次,采用(2~3)℃/min的缓慢升温速度在1 120,1 150,1 050℃分别保温1,2,4 h;最后在空气中急冷获得的Zn2SiO4∶Mn2+荧光粉具有良好的发光性能。Zn2SiO4： Mn^2＋ Phophors was synthesized by using tetramethyl orthosilicate （TMOS）, zinc nitrate and manganese nitrate as raw materials through sol-gel process. XRD results showed that sample ot crystal structure prepared was a-Zn2SiO4, and excited and emission spectra were measured by using fluorescence spectroscopy. The relationship of emission intensity, peak position with amount of raw materials, degree of Zn^2 ＋ substituted by Mn^2＋ and heat treatment temperature was discussed. The results indicated that the technological process for preparing Zn2SiO4： Mn^2＋ phosphors with excellent performance was that ： the amount of TMOS was excessive 1% firstly, then, heating rate was （2 - 3） ℃/min and kept temperature at 1 120,1 150 ℃ and 1 050 ℃ for 1,2 and 4 h respectively,and quickly cooled to room temperature in air at last.

关 键 词：溶胶-凝胶 荧光粉 四甲氧基硅 工艺方法 

分 类 号：TQ11[化学工程—无机化工]