脉冲阳极氧化条件对多孔硅法布里-珀罗干涉特性影响  

Effect of Pulse Anodizing Conditions on Fabry-Pérot Interference Characteristics of Porous Silicon

作　　者：黎学明[1] 杨金瑞 陈建文[1] 杨文静[1] 

机构地区：[1]重庆大学化学化工学院,重庆400030

出　　处：《化学学报》2009年第7期693-699,共7页Acta Chimica Sinica

基　　金：国家自然科学基金(No.10476035)资助项目.

摘　　要：采用电化学脉冲阳极氧化法制备具有干涉效应的多孔硅.研究电流密度、有效阳极氧化时间、电解液组成对多孔硅法布里-珀罗(F-P)干涉特性的影响,利用光纤光谱仪测量多孔硅反射光谱并计算其光学厚度.结果表明,当阳极氧化电流密度78mA·cm-2、有效阳极氧化时间5min、氢氟酸与乙醇体积比VHF∶VEtOH=2∶1时,制备的多孔硅法布里-珀罗干涉条纹均匀,膜层性质稳定;当与饱和乙醇气体接触时,多孔硅反射光谱吸收峰位由612红移到637nm,光学厚度由5864增加到6296nm,表明利用多孔硅法布里-珀罗干涉效应检测乙醇气体思路是可行的.Porous silicon with interference characteristics was prepared by the pulsed electrochemical anodization method. The influences of current density, effective anodization time and electrolyte composition on the Fabry-Perot （F-P） interference characteristic of porous silicon were investigated. Interferometric reflectance spectra of the porous silicon were measured using a fiber spectrometer and the corresponding optical thickness was calculated. The results show that the porous silicon can produce uniform F-P interference rings, under the condition of current density 78 mA·cm^-2, effective anodization time 5 rain and VHF ; VEtOH =2 ： 1. The property of the films prepared under the conditions is very stable. The reflectance spectra of the porous silicon also were red-shifted from 612 to 637 nm, and the corresponding optical thickness was increased from 5864 to 6296 nm upon exposure to saturated ethanol vapor. It is feasible that ethanol vapor can be detected by F-P interference effect of the porous silicon.

关 键 词：多孔硅 法布里-珀罗干涉 光学厚度 传感 

分 类 号：O433.1[机械工程—光学工程]