介观压阻型硅微压力传感器仿真分析  

Silicon Micro-pressure sensor based on Meso-piezoresistance

作　　者：王伟[1] 温廷敦[1] 

机构地区：[1]中北大学微米纳米技术研究中心

出　　处：《电子技术（上海）》2009年第4期53-56,共4页Electronic Technology

摘　　要：为了突破传统机电转换局限,提高压力传感器灵敏度,提出以介观压阻效应[1]为工作原理制作高灵敏度的硅微压力传感器,设计了一种圆形的平膜片结构,建立其三维实体有限元模型,通过理论分析与仿真计算,得出该结构的尺寸对其灵敏度、固有频率、谐振频率及模态振型的影响规律,为此类压力传感器结构的优化设计提供参考。A high sensitivity silicon micro-pressure sensor based on meso-piezoresistance effect is proposed, in order to break through the traditional electro-mechanical transformation and enhance the micro-pressure sensor sensitivity. Plat circle film structure is proposed and 3D solid FEA model is set up. The influence of the structure size on the sensitivity, natural frequency, resonant frequency and mode are analyzed by theoretic analysis and emluational calculation, based on it, the preference to the optimization of the structure is provided.

关 键 词：介观压阻效应 压力传感器 有限元 灵敏度 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TM743[自动化与计算机技术—控制科学与工程]