聚酰亚胺、四甲基氢氧化胺对Si-SiO_2界面的影响  

The effect of polyimide and tetramethylammonium hydroxide to SiSiO2 interface

作　　者：张济龙[1] 

机构地区：[1]西南农业大学基础科技学院物理系

出　　处：《半导体杂志》1998年第2期1-3,共3页

摘　　要：通过几组对比实验，揭示了聚酰亚胺、四甲基氢氧化胺对ＳｉＳｉＯ２界面的影响：聚酰亚胺在ＳｉＳｉＯ２界面上引入正电荷，四甲基氢氧化胺则在ＳｉＳｉＯ２界面上引入负电荷。Through comparing several different experiments,the effect of polyimide and tetramethylammonium hydroxide to SiSiO2 interface is indicated. Polyimide can take positive charge into SiSiO2 interface, tetramethylammonium hydroxide can take negative charge into SiSiO2 interface. This conclusion is very important for the research of passivated thin film how to resist γ ray.

关 键 词：界面 硅 二氧化硅 聚酰亚胺 四甲基氢氧化胺 

分 类 号：TN304.12[电子电信—物理电子学] TN304.21