不同反射率半导体激光放大器的增益谱特性  

Gain spectrum properties of semiconductor laseramplifier with different reflectivity

作　　者：张哲民[1] 黄德修[1] 李同宁 刘涛 金锦炎 黄格凡 刘自力 李云樵 

机构地区：[1]华中理工大学 [2]武汉电信器件公司

出　　处：《半导体光电》1998年第3期177-179,共3页Semiconductor Optoelectronics

基　　金："八六三"计划资助

摘　　要：采用传输矩阵方法（ＴＭＭ）对具有不同腔面反射率的半导体激光放大器的特性进行了分析。在相同的注入水平下镀膜后峰值增益波长会产生几十纳米的蓝移。讨论了沿腔面均匀注入和非均匀注入时的增益特性，输出功率较小时没有增益饱和效应，两种条件下增益差别不大；当要求输出功率大时，非均匀注入将优于均匀注入。Properties of semiconductor laser amplifier with different reflectivity are analyzed by means of transferring matrix method (TMM).The peak gain wavelength will cause blue shift of some ten nanometers after coating with the injection of the same level.Gain properties at both homogeneous and inhomogeneous injection are discussed,which shows that there is no gain saturation effect at lower output power,and the difference of the gain is not so distinct;whereas at higher output power,the gain obtained at inhomogeneous injection is superior to that of homogeneous one.

关 键 词：半导体 激光放大器 增益谱 传输矩阵 光纤通信 

分 类 号：TN722.32[电子电信—电路与系统] TN929.11