高阻P型硅PN结中的光电转换  

Photoelectric conversion in PN junction of high-pure P-type silicon

作　　者：陈杰[1] 

机构地区：[1]杭州应用工程技术学院

出　　处：《半导体光电》1998年第3期208-209,共2页Semiconductor Optoelectronics

摘　　要：用高阻Ｐ型硅（ρ＝１２０００Ω·ｃｍ）单晶材料制作了ＰＮ结光敏二极管，对二极管的光电参数进行了测量。在激光辐射下，测出样管在光照前后的Ｃ—Ｖ实验曲线及样管在光照前后的电容相对变化可达到１００％，远大于低阻Ｐ型硅ＰＮ结在光照前后电容的相对变化率，并得到零偏下样管电容在光照前后的相对变化率为１２１．７％。The PN junction photodiodes made from high-pure P-type silicon (ρ=12 000 Ω·cm)are fabricated,and their photoelectric parameters are measured.It shows that the capacitance variation of photoelectric varactor diodes described in this paper is much larger than that of PN junction with and without illumination.The relative variation ratio of the capacitance in the sample is ～100%,and that of 121.7% is obtained under zero voltage.

关 键 词：半导体光电器件 光敏二极管 光电容 PN结 

分 类 号：TN364.2[电子电信—物理电子学]