红外发射率调制技术研究  

A Study on the Modulation Technology of Infrared Emissivity

作　　者：路远[1] 李玉波[1] 吴丹[1] 乔亚[1] 

机构地区：[1]电子工程学院安徽省红外与低温等离子体重点实验室,安徽合肥230037

出　　处：《红外技术》2009年第4期236-239,共4页Infrared Technology

摘　　要：物体红外发射率的调制具有广泛的应用前景。从理论上研究了红外发射率的调制机理,给出了三种调制发射率的技术途径:机械式、半导体载流子调制和电化学式。机械式发射率调制技术是利用不同发射率的材料组合来进行调制,通过调整不同材料在表面所占比例来调整发射率。半导体材料可通过调制PN结中的自由电子浓度实现红外发射率的调节。电化学式调制可通过多层薄膜实现。通过电场控制器件中变发射率薄膜层的离子和电子浓度,实现器件红外发射率的调制。There is a wide usage to control the infrared emissivity of an object. The modulation mechanism had been studied and three modulation ways to control the emissivity were given： mechanical modulation, semiconductor modulation and electrochemistry modulation. For mechanical modulation, it adjusted the corporation of that variable materials which have different emissivity. For semiconductor modulation, it adujsted the consistency of flee electrons in the PN Junction. For Electrochemistry modulation, it adjusted the consistency of ions and electrons in the modulation film of the apparatus with electric field.

关 键 词：红外发射率 机械式 半导体 电化学 

分 类 号：TN21[电子电信—物理电子学]