沉积温度对磁控溅射法制备La_(0.5)Sr_(0.5)CoO_3薄膜微结构和导电性能的影响  

Effect of Deposition Temperatures on Microstructure and Conduction Properties of La_(0.5)Sr_(0.5)CoO_3 Films Prepared by Magnetron Sputtering

作　　者：付跃举[1] 刘保亭[1] 郭颖楠[1] 傅广生[1] 

机构地区：[1]河北大学物理科学与技术学院铁性材料与器件研究所,河北保定071002

出　　处：《机械工程材料》2009年第4期18-21,共4页Materials For Mechanical Engineering

基　　金："973"前期研究专项资助项目(2007CB616910);国家自然科学基金资助项目(50572021;60876055);河北省自然科学基金资助项目(E2008000620);教育部基金资助项目(207013)

摘　　要：采用射频磁控溅射法在(001)SrTiO3基片上制备了La0.5Sr0.5CoO3薄膜,研究了沉积温度对La0.5Sr0.5CoO3薄膜微结构和导电性能的影响。结果表明:沉积温度低于400℃时,薄膜以非晶状态存在,未发生外延生长,沉积温度为550℃和650℃时,薄膜在基片上实现了外延生长;随着沉积温度的升高薄膜表面粗糙度呈现规律性的变化;薄膜的电阻率随沉积温度的升高单调下降,650℃沉积薄膜的电阻率最小为1.63μΩ.cm。La0.5Sr0. 5 CoO3 films were deposited on （001） SrTiO3 substrates at different temperatures using radio frequency magnetron sputtering method, and the effect of deposition temperatures on microstructure and conduction properties of the films were studied. The results show that when the deposition temperature was lower than 400 ℃, the prepared La0. 5 St0. 5 CoO3 films existed in amorphous state and there was no epitaxial growth. However, epitaxial growth of La0.5Sr0. 5CoO3 films on SrTiO3 substrates happened when the deposition temperature were 550℃ and 650 ℃. The surface roughness of the deposited films changed regularly with the increase of deposition temperatures. The resistivity of La0.5 Sr0.5 CoO3 films decreased monotonically with the increase of deposition temperature, and film deposited at 650 ℃ had the lowest resistivity of 163μΩ ·cm.

关 键 词：La0.5Sr0.5CoO3薄膜 射频磁控溅射 外延生长 

分 类 号：O484.1[理学—固体物理]