一种射频功放记忆效应改善及模型简化方法  

A Technique of Memory Effects Reduction and Model Simplification for RF Power Amplifier

作　　者：张雷[1] 周健义[1] 赵嘉宁[1] 翟建锋[1] 洪伟[1] 

机构地区：[1]东南大学毫米波国家重点实验室,南京210096

出　　处：《微波学报》2009年第2期65-69,共5页Journal of Microwaves

基　　金：国家"863"高技术项目(2007AA01Z2B4);国家自然科学基金资助项目(60621002)

摘　　要：研究了一种改善射频功放记忆效应的方法并对所设计的低记忆功放进行了行为级建模。设计了10W峰值功率的射频功放,通过加载漏级低阻抗终端并结合最佳电流偏置的方法来减少功放的记忆效应。在建模过程中应用了Cao方法估计功放的记忆长度并进行了验证。基于上述技术,文中所设计的低记忆射频功放能够用简单模型精确描述。实验结果表明,对设计的低记忆功放,采用仅包含7个复系数的Hammerstein模型就可以得到-48.5dB的归一化均方误差(NMSE)指标。In this paper, a systematic methodology for characterizing a radio frequency power amplifier with minimized memory effects is investigated. A 10W peak power amplifier is designed and appropriately biased for memory effects reduction. The memory length of the designed power amplifier is estimated accurately by using the ＂false nearest neighbors＂ principles and experimentally verified. Based on the above techniques, the designed power amplifier can be characterized by a very simple model with high accuracy. Experimental results show that the normalized mean square error better than -48dB is achieved when a Hammerstein model with only 7 complex coefficients is adopted.

关 键 词：功率放大器 记忆效应 记忆长度 行为级模型 

分 类 号：TN722.75[电子电信—电路与系统] TG139.6[一般工业技术—材料科学与工程]