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作 者:石连升[1] 孙金超[1] 刘淑杰[1] 王锐[2] 马德才[2] 尹燕[2]
机构地区:[1]哈尔滨理工大学材料科学与工程学院,黑龙江哈尔滨150040 [2]哈尔滨工业大学理学院,黑龙江哈尔滨150001
出 处:《化学工程师》2009年第4期60-62,共3页Chemical Engineer
摘 要:本文采用提拉法生长Zn(3(mol)%,5(mol)%,7(mol)%)∶LiTaO3晶体。通过Zn∶LiTaO3晶体的紫外-吸收光谱和红外光谱测试结果来推测Zn2+对晶体结构的影响。ZnO掺杂3(mol)%,5(mol)%时,Zn2+取代反位钽的位置,从而使晶体中的光电导下降,晶体的抗光损伤性能得到改善。当ZnO掺杂达到7(mol)%时,Zn2+将晶体中的所有反位钽取代,并开始取代正常晶格的Li位,因此,晶体的抗光折变性能比纯的钽酸锂晶体提高了两个数量级。Doping ZnO in LiTaO3 in 3(mol)%, 5(mol)%, 7(mol)%. ZnO:LiTaO3 were grown by the Czochraski method , We tested the absorption spctrum and studied the change mechanism of the UV-V absorption edge. When the ZnO concentration reached 3(mol)% and 5(mol )% concentration, Zn^2+ ions took all priority of replacing anti-site Ta (Ta^4+Li).In contrast, so its diffraction efficiency and erasure time decreased, its light scattering resistance im- proved, when the ZnO concentration reached 7(mol)%, all of the ions were completely replaced, and Zn^2+ ions began to occupy the normal. Its light scattering resistance of samples increased significantly. It's two orders of magnitude higher than that of pure LiTaO3 crystals.
关 键 词:Zn∶LiTaO3晶体 光谱性能 抗光致散射
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