制备温度对多孔硅光学特性的影响(英文)  

Critical anodization temperature for optical transition of porous silicon

作　　者：潘丽坤[1] 李海波[1] 孙卓[1] 孙长庆[2] 

机构地区：[1]华东师范大学物理系纳光电集成与先进装备教育部工程研究中心,上海200062 [2]新加坡南洋理工大学电子与电气工程学院,新加坡639798

出　　处：《功能材料与器件学报》2009年第2期165-168,共4页Journal of Functional Materials and Devices

基　　金：Shanghai Natural Science Foundation(No.07ZR14033);Shanghai Pujiang Program(No.08PJ14043);Special Project for Nanotechology of shanghai(No.0752nm011);Applied Materials Shanghai Research & Development Fund(No.07SA12)

摘　　要：本文不同的温度下制备多孔硅。通过荧光光谱、光吸收谱、X射线光电子谱研究了多孔硅的光和结构特性。研究结果表明存在着一个制备临界温度343K,当制备温度从临界温度之下提高到临界温度之上时,多孔硅的荧光和光吸收从红移转向蓝移,同时硅2p电子结合能也从减小转向增大。The porous silicon （PS） samples were prepared at different anodization temperature. Photolu- minescence, photo- absorbance, and X- ray photoelectron spectroscopies were used to study the structural and optical behavior of the PS. The results showed that an optical transition of porous silicon from red shift to blue shift, and Si -2p binding energy transition from low to high at a critical anodization temperature, 343 K.

关 键 词：多孔硅 制备温度 光特性 

分 类 号：TB383[一般工业技术—材料科学与工程]