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出 处:《功能材料与器件学报》2009年第2期180-184,共5页Journal of Functional Materials and Devices
基 金:湖北省教育厅项目资助(Q200722002);黄石市科技局项目;湖北师范学院重点项目(2006A15)资助
摘 要:用溶胶-凝胶方法在LaNiO3底电极上制备了BiFeO3/PbTiO3多层薄膜。研究了室温下薄膜的结构,铁电性质和漏电流性质,并将其与纯的BiFeO3薄膜的性质进行了比较。从薄膜的XRD模式中可以观察到共存的BiFeO3相和PbTiO3相。通过电滞回线测量发现,在较低的测试电场下,BiFeO3/PbTiO3多层薄膜表现出反铁电性;而在较强的测试电场下表现出铁电性。相对于纯的BiFeO3薄膜,BiFeO3/PbTiO3多层薄膜能够承受更高的测试电场而获得充分极化,从而表现出较强的铁电性。漏电流特性测试表明,相对于纯的BiFeO3薄膜,BiFeO3/PbTiO3多层薄膜具有更低的漏电流。BiFeO3/PbTiO3 multilayer film has been prepared on LaNiO3 bottom electrodes by sol -gel process. Structure, ferroelectric and leakage conduction properties at room temperature were studied by comparing with pure BiFeO3 film. BiFeO3 and PbTiO3 phases can be observed from the XRD patterns. Antiferroelecricity is able to be observed in BiFeO3/PbTiO3 multilayer film under low applied field by measuring the electric hysteresis loop; while under higher applied field, ferroelectricity is able to be observed. Comparing with pure BiFeO3 film, the BiFeO3/PbTiO3 muhilayer film can endure higher applied field thus getting fully polarized and shows more intense ferroelectricity. Moreover, the BiFeO3/PbTiO3 muhilayer film has lower leakage current comparing with the pure BiFeO3 film.
关 键 词:BIFEO3薄膜 BiFeO3/PbTiO3多层薄膜 铁电性 漏电流
分 类 号:TN304.055[电子电信—物理电子学]
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