Controlled Evolution of Silicon Nanocone Arrays Induced by Ar^＋ Sputtering at Room Temperature  

作　　者：李勤涛 李志刚 谢巧玲 巩金龙 朱德彰 

机构地区：[1]Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 [2]Department of Physics, Taizhou Univeristy, Taizhou 317000

出　　处：《Chinese Physics Letters》2009年第5期169-172,共4页中国物理快报（英文版）

摘　　要：Controlled evolution of silicon nanocone arrays induced by Ar^＋ sputtering at room temperature, using the coating carbon as a mask, is demonstrated. The investigation of scanning electron microscopy indicates that the morphology of silicon nanostructures can be controlled by adjusting the thickness of the coating carbon film. Increasing the thickness of the coating carbon film from 50-60 nm, 250-300 nm and 750-800 nm to 1500 nm, the morphologies of silicon nanostructures are transformed from smooth surface ripple, coarse surface ripple and surface ripple with densely distributed nanocones to nanocone arrays with a high density of about 1 × 10^9- 2 × 10^9 cm^-2.Controlled evolution of silicon nanocone arrays induced by Ar^＋ sputtering at room temperature, using the coating carbon as a mask, is demonstrated. The investigation of scanning electron microscopy indicates that the morphology of silicon nanostructures can be controlled by adjusting the thickness of the coating carbon film. Increasing the thickness of the coating carbon film from 50-60 nm, 250-300 nm and 750-800 nm to 1500 nm, the morphologies of silicon nanostructures are transformed from smooth surface ripple, coarse surface ripple and surface ripple with densely distributed nanocones to nanocone arrays with a high density of about 1 × 10^9- 2 × 10^9 cm^-2.

分 类 号：TQ333.93[化学工程—橡胶工业] TB383[一般工业技术—材料科学与工程]